• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a measuring arrangement for sensor technology, comprising a measuring transducer (1) in which piezoresistive resistors (3.1, 3.2, 3.3, 3.4) are integrated on a silicon plate (2), which are connected in a Wheatstone full bridge. The measuring arrangement contains a silicon plate (2) with integrated piezoresistive resistors (3.1, 3.2, 3.3, 3.4), connected in a Wheatstone full bridge, two pairs of two integrated piezoresistive resistors (3.1, 3.2: 2) being arranged on the silicon plate (2). 3.3, 3.4) are arranged so that between the resistors of each of the two pairs of resistors (3.1, 3.2, 3.3, 3.4) there is a distance (a) in the transverse direction to the silicon plate (2), and between the resistor pairs (3.1, 3.2), (3.3, 3.4) in the longitudinal direction of the silicon plate (2) a distance (b) is present, which is greater than the distance (a) in the transverse direction to the silicon plate (2), the piezoresistive resistors (3.1, 3.2, 3.3, 3.4) Conductor tracks (6) are interconnected, at one end of the silicon plate (2) a first contact pair (5) for applying a bridge supply voltage (UB) and a second contact pair (4) for tapping a bridge output voltage (UD) are arranged, and silicon Mounting surfaces (7) are provided at the two ends of the silicon transducer (1) in the electrically neutral region and via which the transducer (1) with a silicon deformation body (8) is connected, wherein the transducer (1) is arranged so the first piezoresistive resistance pair (3.1, 3.2) is located in a compression area and the second piezoresistive resistance pair (3.3, 3.4) is located in an expansion area.
    公开号:CH704818B1
    申请号:CH00322/12
    申请日:2012-03-07
    公开日:2017-02-15
    发明作者:Jäger Gerd
    申请人:Sios Messtechnik Gmbh；
    IPC主号:
    专利说明:

    The invention relates to a measuring arrangement for the sensor technology, with a transducer in which on a silicon plate piezoresistive resistors are integrated, which are connected in a Wheatstone full bridge.
    The invention is particularly suitable for the measurement of pressures, forces and accelerations with larger measuring ranges.
    Various arrangements for pressure, force and acceleration measurement are known from the prior art.
    In various applications, bending bodies are used for force and acceleration measurement, on which strain gauges are glued. For increased demands in force measurement so-called bone deformation body, which consist for example of aluminum used. On the surfaces of these deformation body strain gauges are also glued. Glued strain gages are always associated with technological problems and instabilities are the result (Kochsiek: Handbook of Weighing, Friedr. Vieweg & Sohn, 1989 and K. Hoffmann: An Introduction to the Technique of Measurement with Strain Gages, Hottinger Baldwin Messtechnik GmbH, 1987).
    Also for pressure measurement metallic pressure membranes are used with glued strain gauges. The so-called rosette strain gauges, which are used in pressure measurement, have four connected to a Wheatstone full bridge strain gauges (Bonfig et al.: The manual for engineers, sensors, sensors, Expert Verlag, 1988).
    Pressure sensors in silicon technology with integrated piezoresistive resistors, interconnected in a Wheatstone full bridge, already find a wide application in industry and technology (K.W. Bonfig et al .: Technical pressure and force measurement, Expert Verlag, 1988).
    The silicon pressure sensors have all the advantages that have integrated piezoresistive resistors, and avoid the disadvantages of glued strain gauges.
    For measuring three forces arrangements with a so-called silicon Bossstruktur with integrated piezoresistive resistors are known. Such a 3D sensor is described for the first time in S. Bütefisch, S. Büttgenbach: Tactile three-component force sensor, tm - Technisches Messen 66 (1999) 5, p 185-190 described in detail.
    Although with this arrangement, compared to glued metallic strain gauges enormous technical progress has been achieved, there are still the following deficiencies:<tb> 1. <SEP> The spring stiffness in the z-direction differs greatly from those in the x- and y-directions.<tb> 2. <SEP> Deformations of the stylus give rise to additional errors.<tb> 3. <SEP> The attachment of the stylus to the boss diaphragm is difficult.
    DE 10 2008 037 926 B4 describes an arrangement for the tactile measurement of three-dimensional forces, which overcomes the deficits of the aforementioned 3D-probe. In the arrangement described there, two silicon parallel spring arrangements, each offset by 90 °, each having four piezoresistive resistors which are connected to Wheatstone full bridges, are present directly above the feeler element. This allows forces in the x and y directions to be measured. To measure the forces in the z-direction, further silicon parallel spring arrangements, again with four piezoresistive resistors in full bridge connection, are arranged in a 90 ° position transversely to the two first parallel silicon spring arrangements. Between the second parallelepiped spring arrangement and the third parallelepiped spring arrangement, a stylus can be mounted, the deflection of which does not exert any influence on the measurement result. In this device, the probe elements can be easily replaced and the silicon parallel spring arrangements can be easily dimensioned so that the spring stiffness in the x, y and z directions are the same.
    With this arrangement, only forces can be achieved with force ranges that are predetermined by the silicon wafer thicknesses.
    DE 3 702 412 C2 describes a pressure transducer in which a silicon body is arranged on a carrier substrate. The silicon body has a blind hole-like cavity containing a pressure membrane. On the pressure membrane piezoresistive resistors are arranged, which are interconnected in a Wheatstone bridge. The arrangement has a further cavity in the silicon body, whereby a linearization of the characteristic should also take place at high pressures. In this arrangement, it is disadvantageous that the piezoresistive resistors are located at differently stressed locations of the pressure membrane, so that variations in thickness of the pressure membrane lead to cross sensitivities and nonlinearities. The avoidance of measurement errors, which are caused by Torsionsbeanspruchungen, is thus not possible.
    US 7 398 688 B2 describes an implantable pressure sensor with which a desirable for medical applications drift-free behavior is to be achieved. For this purpose, sensors are arranged above and below a pressure membrane.
    Furthermore, from US Pat. No. 5,932,809 A a sensor is known in which a silicon sensor chip with piezoresistive expansion elements is glued to a metal body. Because of the different thermal expansion coefficients of metal and silicon, this leads to strong drift phenomena with temperature changes, so that this arrangement is unsuitable for accurate measurements.
    In the prior art quite different technologies and structures are used for pressure, force and acceleration measurement. Furthermore, there are limitations in the realization of larger measuring ranges, or high loads.
    The invention is therefore based on the object to provide a measuring arrangement for the sensor technology, which use the advantages of silicon technology with integrated piezoresistive resistors in full bridge circuit, the measuring ranges are significantly expanded and are suitable for universal pressure, force and acceleration measurements ,
    The object is achieved according to the invention with a measuring arrangement which has the features specified in claim 1, and with parallel spring arrangements according to claim 6 and a sensor system according to claim 7.
    Advantageous embodiments of the invention are the subject of the dependent claims.
    The invention comprises a measuring arrangement for the sensor technology, which contains a silicon plate in which four piezoresistive resistors are present, which are usually connected to form a Wheatstone full bridge. The peculiarities of the transducer are that on the silicon plate two pairs of two integrated piezoresistive resistors are arranged so that between the resistors of each of the two pairs of resistances a distance in the transverse direction to the silicon plate exists and between the resistor pairs in the longitudinal direction of the silicon plate is a distance is larger than the distance in the transverse direction to the silicon plate. Another special feature results from the fact that surfaces are located at both ends of the silicon plate, which are electrically neutral and are used to attach the transducer to a silicon deformation body. This enables pressure, force and acceleration measurements of larger measuring ranges according to a uniform principle.
    Further advantages of the invention are:Silicon is connected to silicon, i.e., the transducer can be e.g. be bonded by gluing or diffusion bonding with a silicon deformation body. As a result, high stability, temperature independence and high sensitivity are achieved even with large measuring ranges.With only one transducer different measuring tasks can be solved.The fact that the piezoresistive resistors arranged in parallel are at a minimum possible distance transversely to the silicon plate results in insensitivity to transverse forces and moments.
    The transducer can be mounted on a silicon pressure membrane so that two piezoresistive resistors are in the region of compression and two more are in the region of elongation of the silicon pressure membrane.
    For force or acceleration measurement, a retrograde lever is attached to a free end of a suitable silicon deformation body having two thin bodies. At the free end of the lever either an external force F or the inertial force of a seismic mass attacks. The transducer is now mounted on the silicon deformation body so that two piezoresistive resistors are disposed at one thin spot in the compression region of the silicon deformation body and the other two piezoresistive resistors at the other thin site are in the strain region.
    These arrangements can be advantageously used for larger measuring ranges.
    In order to measure very large forces, the Siliziumverformungskörper Z-shaped design. This z-shaped Siliziumverformungskörper consists of two horizontally extending parts and an oblique connecting part. The transducer is arranged on the oblique connecting part so that a piezoresistive resistor pair is located in the expansion region and another piezoresistive resistor pair is mounted in the compression region.
    In contrast to the prior art 3D-push button with the same spring stiffnesses in all measuring directions and large force measuring ranges can be realized. For this purpose, two silicon parallel spring arrangements offset by 90 ° are arranged behind one another in the direction of the parallel spring arrangements. Further silicon parallel spring arrangements are arranged transversely, ie offset by 90 °, to the former silicon parallel spring arrangements. Each silicon parallel spring assembly consists of silicon deformation bodies, which are dimensioned according to the desired force measurement ranges and connected by spacers. On each of a silicon spring of the silicon parallel spring arrangements, a transducer is applied. The forces act on the free end of the first silicon parallel spring arrangement.
    The transducer can also be used for measurement itself. For this purpose, the transducer is attached at one end by means of a mounting surface at a clamping point. At the other end of the transducer is a lever at the end of the force to be measured F or the inertial force of a seismic mass attacks arranged so that form in the transducer strain and compression areas. Such an arrangement can be advantageously used when small forces or inertial forces are to be measured.
    Embodiments of the invention will be explained in more detail below with reference to drawings.
    [0028] FIG.<Tb> FIG. 1 <SEP> the transducer in a plan view,<Tb> FIG. 2 <SEP> the application of the transducer for pressure measurement for larger measuring ranges,<Tb> FIG. 3 <SEP> the application of the transducer for force and acceleration measurement for larger measuring ranges,<Tb> FIG. 4 <SEP> the application of the force measurement transducer,<Tb> FIG. 5 <SEP> a sensor for measuring three forces and a moment for larger measuring ranges,<Tb> FIG. 6 <SEP> the side view of the arrangement shown in Figure 5<Tb> FIG. 7 <SEP> the direct application of the transducer for force and acceleration measurement and<Tb> FIG. 8 <SEP> a force sensor for heavy loads.
    Fig. 1 shows the transducer 1. On a silicon plate 2 four piezoresistive resistors 3.1, 3.2, 3.3 and 3.4 are integrated. The piezoresistive resistors 3.1, 3.2, 3.3 and 3.4 are mounted on the silicon plate 2 so that between each two parallel piezoresistive resistors 3.1, 3.2 and 3.3, 3.4 a minimum distance a is present and between the piezoresistive resistor pairs 3.1, 3.2 and 3.3, 3.4 in the longitudinal direction of the transducer 1, a greater distance b exists. The piezoresistive resistors 3.1, 3.2, 3.3, 3.4 are interconnected by printed conductors 6 to a Wheatstone full bridge.
    To supply the bridge, the supply voltage UBan the contacts 5.1 and 5.2, while the bridge output voltage UDan the contacts 4.1 and 4.2 is formed. The bridge output voltage UDis formed when in the transducer 1, for example, the piezoresistive resistors 3.1, 3.2 stretched and the piezoresistive resistors 3.3, 3.4 are compressed. At both ends of the transducer 1 surfaces 7 are provided for mounting the transducer 1 on silicon deformation bodies. In the attachment surfaces 7 are no electrical elements.
    In Fig. 2, the application of the transducer 1 is shown for pressure measurement. On a silicon pressure membrane 8, which deforms as a result of the pressure P in the manner shown, the transducer 1 is mounted so that, for example, the piezoresistive resistors 3.1 and 3.2 are in the compression region and the piezoresistive resistors 3.3 and 3.4 in the strain region of the silicon pressure membrane. With the rigidity of the silicon membrane 8, the pressure range can be varied within wide limits.
    Fig. 3 shows an arrangement for measuring forces. A silicon deformation body 8 is fixed at one end to a clamping point 11, and at the other free end, a lever 9 is mounted in the direction of the clamping point 11. The lever 9 can be arranged above or below the silicon deformation body 8. Attacks a force F at the end of the lever 9, then arise in the silicon deformation body 8 areas that are stretched, and those that are compressed. The transducer 1 is mounted on the silicon deformation body 8 that, for example, the piezoresistive resistors 3.1 and 3.2 are in the compression region of a first thin spot 16 and the piezoresistive resistors 3.3 and 3.4 in the expansion region of a second thin spot 17. To measure the acceleration, a seismic mass 10 is attached to the free end of the lever 9, as a result of the acceleration, the inertia forces the silicon deformation body 8 bend. With the change of the rigidity of the silicon deformation body 8, the force and acceleration ranges can be varied.
    Fig. 4 shows a device for measuring force with a parallel arrangement of silicon deformation bodies 8.1 and 8.2. The silicon deformation bodies 8.1 and 8.2 are connected by the spacers 12. At a spacer 12, the attachment to the clamping point 11 and at the other spacer 12, the force to be measured F is applied. On the silicon deformation body 8.1 of the transducer 1 is fixed so that the piezoresistive resistors 3.1 and 3.2 compressions and the piezoresistive resistors 3.3 and 3.4 expansions are exposed. Again, the force measuring ranges can be changed by varying the spring stiffness of the silicon deformation body 8.1 and 8.2 within wide limits.
    In Fig. 5, a sensor for measuring three forces and a moment for large measuring ranges is shown. Two parallel silicon spring arrangements, which consist of the silicon deformation bodies 8.7. 8.8 and 8.5, 8.6 and the spacers 15, 14 and 13 are formed, are arranged one behind the other. The second of these parallel silicon spring arrangements is rotated 90 ° to the first. Two further parallel silicon spring arrangements are arranged at 90 ° transverse to the first two parallel silicon spring arrangements. These silicon parallel spring assemblies are composed of the silicon deformation bodies 8.1, 8.2 and 8.3, 8.4 and are connected by the spacers 12 and 13. The attachment to the clamping point 11 is carried out with the two spacers 12. On the silicon deformation bodies 8.1, 8.3, 8.5 and 8.7, transducers 1 are mounted. The forces to be measured Fx, Fy, Fz and the moment Mygreifen at the free end of the first parallel silicon spring assembly, ie on the spacer 15 at. The force Fx can be measured with the first parallelepiped spring arrangement, the force Fymit of the second parallelepiped spring arrangement, and the force Fz and the moment M with the two parallelepipedic spring arrangements arranged at 90 ° to the former.
    FIG. 6 shows a side view of FIG. 5. FIG. From Fig. 6, the structure of the second silicon parallel spring arrangement with the silicon deformation bodies 8.5 and 8.6. and the spacers 13 and 14 and the transducer 1 can be seen.
    Fig. 7 illustrates a force sensor, in which the transducer 1 is used as a deformation body and as a measuring element. One end of the transducer 1 is fastened to the clamping point 11 via a fastening surface 7, while a lever 9 is again arranged in the direction of the clamping point 11 at the free end of the transducer 1. Attacks a force F at the free end of the lever 9, then arise in the transducer 1 compression and expansion areas. If, for example, the piezoresistive resistor pairs 3.1 and 3.2 are in the compression region and the piezoresistive resistor pairs 3.3 and 3.4 are in the expansion region, then the piezoresistive resistors 3.1, 3.2, 3.3, 3.4 can be connected to form a Wheatstone full bridge. The arrangement is particularly suitable for the measurement of small forces.
    In a force sensor shown in Fig. 8 for the measurement of very large forces of the silicon deformation body is designed z-shaped. This deformation body consists, just like a z, of two horizontally arranged parts 8.1 and 8.2. These two parts 8.1 and 8.2 are connected by a sloping part 8.3. The one horizontal part 8.2 is located on a clamping point 11 and the other horizontal part 8.1, the force F attacks. The transducer 1 is attached to the oblique part 8.3 so that a piezoresistive resistor pair 3.1; 3.2 is in the strain area and another piezoresistive resistance pair 3.3; 3.4 is arranged in the compression area.
    LIST OF REFERENCE NUMBERS
    [0038]<Tb> 1 <September> Transducers<Tb> 2 <September> silicon plate<tb> 3.1 <SEP> piezoresistive resistance<tb> 3.2 <SEP> piezoresistive resistance<tb> 3.3 <SEP> piezoresistive resistance<tb> 3.4 <SEP> piezoresistive resistance<tb> 4.1 <SEP> Contact for bridge output voltage<tb> 4.2 <SEP> Contact for bridge output voltage<tb> 5.1 <SEP> Contact for bridge supply voltage<tb> 5.2 <SEP> Contact for bridge supply voltage<Tb> 6 <September> conductor tracks<Tb> 7 <September> mounting surfaces<Tb> 8 <September> Silicon deformable body<tb> 8.1 <SEP> first part body<tb> 8.2 <SEP> second partial body<tb> 8.3 <SEP> third partial body<tb> 8.4 <SEP> Fourth Silicon Deformation Body<tb> 8.5 <SEP> fifth silicon deformation body<tb> 8.6 <SEP> sixth silicon deformation body<tb> 8.7 <SEP> Seventh Silicon Deformation Body<tb> 8.8 <SEP> Eighth Silicon Deformation Body<Tb> 9 <September> Lever<tb> 10 <SEP> Seismic mass<Tb> 11 <September> clamping<tb> 12 <SEP> first spacer<tb> 13 <SEP> second spacer<tb> 14 <SEP> third spacer<tb> 15 <SEP> fourth spacer<tb> 16 <SEP> first thin spot<tb> 17 <SEP> second thin spot<Tb> <September><Tb> a <September> distance<Tb> b <September> distance<Tb> F <September> force<Tb> P <September> Print
    权利要求:
    Claims (8)
    [1]
    1. Measuring arrangement for sensor technology, with a transducer (1), in which on a silicon plate (2) piezoresistive resistors (3.1, 3.2, 3.3, 3.4) are integrated, which are connected in a Wheatstone full bridge, wherein- Two pairs of two integrated piezoresistive resistors (3.1, 3.2, 3.3, 3.4) are arranged on the silicon plate (2) so that a distance (a) between the resistances of each of the two pairs of resistors (3.1, 3.2; ) in the transverse direction to the silicon plate (2), and between the resistor pairs (3.1, 3.2, 3.3, 3.4) in the longitudinal direction of the silicon plate (2) a distance (b) is present, which is greater than the distance (a) in the transverse direction to the silicon plate (2)- The piezoresistive resistors (3.1, 3.2, 3.3, 3.4) are interconnected by conductor tracks (6),A first contact pair (5) for applying a bridge supply voltage (UB) and a second contact pair (4) for picking up a bridge output voltage (UD) are arranged at one end of the silicon plate (2),- Silicon Befesligungsflächen (7) at the two ends of the transducer (1) in the electrically neutral region are present, and over which the transducer (1) with a- Silicon deformation body (8) is connected, wherein the transducer (1) is arranged so that the first piezoresistive resistor pair (3.1, 3.2) in a compression region and the second piezoresistive resistor pair (3.3, 3.4) is located in a strain region.
    [2]
    2. Measuring arrangement according to claim 1, characterized in that the contacts (4.1, 4.2, 5.1, 5.2) of the contact pairs (4, 5) are arranged in a row in the transverse direction to the silicon plate (2).
    [3]
    3. Measuring arrangement according to claim 1 or 2, characterized in that the measuring transducer (1) is connected to the silicon deformation body, wherein the silicon deformation body (8) has a clamping point (11), and at a free end of the silicon deformation body (8) in the direction of the clamping point (11) of the silicon deformation body (8) a lever (9) is arranged, at the free end of an external force (F) can attack and / or a seismic mass (10) is that the transducer (1) is mounted on the silicon deformation body (8) so that the first piezoresistive resistor pair (3.1, 3.2) in the compression region of a first thin point (16) of the silicon deformation body and the second piezoresistive resistor pair (3.3, 3.4 ) is located in the expansion region of a second thin point (17) of the silicon deformation body.
    [4]
    4. Measuring arrangement according to claim 1 or 2, characterized in that the transducer (1) at one end by means of a mounting surface (7) in a clamping point (11) of the Siliziumverformungskörpers (8) is supported and at the other end of the transducer (1) a second fastening surface (7) a lever (9) in the direction of the clamping point (11) is arranged, on which at the free end of the lever (9) a force (F) can attack.
    [5]
    5. Measuring arrangement according to claim 1 or 2, characterized in that the silicon deformation body (8) is in three parts, wherein it consists of a first part body (8.1) and a second part body (8.2), which are arranged parallel to each other horizontally and by a are arranged obliquely thereto third part body (8.3), wherein the second part body (8.2) rests on a clamping point (11), a force F on the first part body (8.1) can attack, and the transducer (1) so obliquely on the third arranged part body (8.3) is mounted, that a piezoresistive resistor pair (3.1, 3.2) is located in the expansion region and another piezoresistive resistor pair (3.3, 3.4) is arranged in the compression region.
    [6]
    6. Parallel spring arrangement for sensor technology, with a plurality of measuring arrangements according to one of claims 1 to 4, characterized in that the silicon deformation body (8.1) of the first measuring arrangement with the silicon deformation body (8.2) of the second measuring arrangement via two spacers (12) a parallelogram is connected, wherein the one spacer (12) at a clamping point (11) of the Siliziumverformungskörpers (8.1) of the first measuring arrangement is fixed and on the other spacer (12) can attack a force to be measured (F).
    [7]
    7. sensor technology system, with multiple parallel spring arrangements according to claim 6, characterized in that two parallel spring arrangements are arranged one behind the other, that the second parallel spring arrangement is rotated by 90 ° against the first parallel spring arrangement that two further parallel spring arrangements are arranged perpendicular to the first two deformation bodies, that each Parallel spring arrangement consisting of two silicon deformation bodies (8.1,
    [8]
    8.2; 8.3, 8.4; 8.5, 8.6; 8.7, 8.8) that the two silicon deformation bodies (8.7, 8.8) of the first parallelepiped spring arrangement are connected by two spacers (15, 14) such that the silicon parallel spring arrangement turned by 90 ° consists of two silicon deformation bodies (8.5, 8.6), which are likewise connected via two spacers (14, 13), that two further silicon parallel spring arrangements arranged transversely to the former silicon parallel spring arrangements consist of the silicon deformation bodies (8.1, 8.2, 8.3, 8.4) and by means of spacers (FIGS. 13, 12) are connected, that on each a silicon-deformation body (8.1, 8.3, 8.5, 8.7), a transducer (1) is mounted, that the spacers (12) are attached to a clamping point (11), and that to measuring forces Fx, Fy, Fz, and a moment Myam can attack free end of the first silicon parallel spring assembly.
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    同族专利:
    公开号 | 公开日
    CH704818A2|2012-10-15|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    DE202016106267U1|2016-11-09|2018-02-14|JOPE Beteiligungs GmbH|membrane roof|
    法律状态:
    2018-05-15| PCAR| Change of the address of the representative|Free format text: NEW ADDRESS: HOLEESTRASSE 87, 4054 BASEL (CH) |
    2021-10-29| PL| Patent ceased|
    优先权:
    申请号 | 申请日 | 专利标题
    DE20110069224|2011-04-07|
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